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Article Dans Une Revue Materials for Quantum Technology Année : 2022

Optimizing ion implantation to create shallow NV centre ensembles in high-quality CVD diamond

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Midrel Wilfried Ngandeu Ngambou
Pauline Perrin
  • Fonction : Auteur
Ionut Balasa
Ovidiu Brinza
  • Fonction : Auteur
Audrey Valentin
  • Fonction : Auteur
Vianney Mille
  • Fonction : Auteur
Fabien Bénédic
Philippe Goldner
Jocelyn Achard

Résumé

Abstract The negatively charged nitrogen-vacancy centre (so-called NV-centre) in diamond is one of the most promising systems for applications in quantum technologies because of the possibility to optically manipulate and read out the spin state of this defect, even at room temperature. Nevertheless, obtaining high NV densities (>500 ppb) close to the surface (5–20 nm) while maintaining good spin properties remain challenging. In this work we rely on a versatile ion implantation system allowing both implanting nitrogen using N 2 + and creating vacancies with He + ion bombardment at variable energies and fluence to create shallow NV ensembles. By optimizing the ion irradiation conditions as well as the surface preparation prior to treatment we successfully increase the amount of created colour centres while demonstrating narrow magnetic resonance linewidths.
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hal-03868733 , version 1 (23-11-2022)

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Midrel Wilfried Ngandeu Ngambou, Pauline Perrin, Ionut Balasa, Ovidiu Brinza, Audrey Valentin, et al.. Optimizing ion implantation to create shallow NV centre ensembles in high-quality CVD diamond. Materials for Quantum Technology, 2022, 2 (4), pp.045001. ⟨10.1088/2633-4356/ac9948⟩. ⟨hal-03868733⟩
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